Silicon Part

Silicon Part

NoProcess ExplanationPhoto
1Import Ingot and outer appearance inspection
for checking outer appearance Defect,
(Ingot from MEMC Korea Co., Ltd, LG Slitron Co., Ltd,
Toshiba ceramics Co., Ltd)
2Etching at Ingot state for checking dislocation on the surface
3Slicing
4Inspection with microscope for slip or possibility of dislocation
5Shape processing, outer, inner dimension and thickness
6 High purity, Ultrasonic cleaning
7Lapping processing
8Marking
9First Etching (Section 5µm), In the 5000 class clean room
10High purity, Ultrasonic cleaning
11Production final inspection, In the 5000 class clean room
12Polishing processing, In the 5000 class clean room
13Secondary Etching (Section 10 µm), In the 5000 class clean room
14High purity, Ultrasonic cleaning, In the 5000 class clean room
15Desiccation, In the clean box
16 Packing, In the 5000 class clean room (Nitrogen charging using duplex clean vinyl)
17Shipping
 Material Specifications
Material Single-Crystalline Silicon Ingot
Growth MethodCZ
TypeP
DopantBoron
Orientation1-0-0
Resistivity1-5 Ohm Cm
Carbon ContentsMax. 1.0 ppma(New ASTM)
Slipfree
Crackfree
Chipfree
Pin Holefree
Brokenfree